500um Large Area InGaAs Avalanche Photodiode Chip
  • 500um Large Area InGaAs Avalanche Photodiode Chip500um Large Area InGaAs Avalanche Photodiode Chip

500um Large Area InGaAs Avalanche Photodiode Chip

500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.

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Product Description

1. Summary of 500um Large Area InGaAs Avalanche Photodiode Chip

500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.

2. Introduction of 500um Large Area InGaAs Avalanche Photodiode Chip

500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.

3. Features of 500um Large Area InGaAs Avalanche Photodiode Chip

Detect range 900nm-1650nm;

High speed;

High responsivity;

Low capacitance;

Low dark current;

Top illuminated planar structure.

4. Application of 500um Large Area InGaAs Avalanche Photodiode Chip

Monitoring;

Fiber-optic Instruments;

Data Communications.

5. Absolute Maximum Ratings of 500um Large Area InGaAs Avalanche Photodiode Chip

ParameterSymbolValueUnit
Maximum forward current-10mA
Maximum voltage Supply-VBRV
Operating temperatureTopr-40 to +85
Storage temperatureTstg-55 to +125

6. Electro-Optical Characteristics(T=25℃) of 500um Large Area InGaAs Avalanche Photodiode Chip

ParameterSymbolConditionMin.Typ.Max.Unit
Wavelength rangeλ 900-1650nm
Breakdown VoltageVBRId =10uA40-52V
Temperature coefficient of VBR---0.12-V/℃
ResponsivityRVR =VBR -3V1013-A/W
Dark currentIDVBR -3V-0.410.0nA
CapacitanceCVR =38V, f=1MHz-8-pF
BandwithBw--2.0-GHz

7. Dimension Parameter of 500um Large Area InGaAs Avalanche Photodiode Chip

ParameterSymbolValueUnit
Active area diameterD53um
Bond pad diameter-65um
Die size-250x250um
Die thicknesst150±20um

8. Deliver,Shipping And Serving of 500um Large Area InGaAs Avalanche Photodiode Chip

All products have been tested before shipping out;

All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)

We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);

If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;

If the items are defective, please notify us within 3 days of delivery;

Any items must be returned in their original condition to qualify for a refund or replacement;

The buyer is responsible for all the shipping cost incurred.

8. FAQ

Q: What is the active area would you like?

A: we have 50um 200um 500um active area InGaAs Avalanche Photodiode Chip.

Q: What is the requirement for the connector?

A: Box Optronics can customize according to your requirements.

Hot Tags: 500um Large Area InGaAs Avalanche Photodiode Chip, Manufacturers, Suppliers, Wholesale, Factory, Customized, Bulk, China, Made in China, Cheap, Low Price, Quality

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