The 1mm InGaAs/InP PIN Photodiode Chip offer superb response from 900nm to 1700nm, 1mm InGaAs/InP PIN Photodiode Chip is ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current and high bandwidth for high performance and low sensitivity receiver design. This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier.
The 1mm InGaAs/InP PIN Photodiode Chip offer superb response from 900nm to 1700nm, 1mm InGaAs/InP PIN Photodiode Chip is ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current and high bandwidth for high performance and low sensitivity receiver design. This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier.
The 1mm InGaAs/InP PIN Photodiode Chip offer superb response from 900nm to 1700nm, 1mm InGaAs/InP PIN Photodiode Chip is ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current and high bandwidth for high performance and low sensitivity receiver design. This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier.
Detect range 900nm-1650nm;
High speed;
High responsivity;
Low capacitance;
Low dark current;
Top illuminated planar structure.
Monitoring;
Fiber-optic Instruments;
Data Communications.
| Parameter | Symbol | Value | Unit |
| Reverse voltage | VRmax | 20 | V |
| Operating temperature | Topr | -40 to +85 | ℃ |
| Storage temperature | Tstg | -55 to +125 | ℃ |
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Wavelength range | λ | 900 | - | 1650 | nm | |
| Responsivity | R | λ =1310nm | 0.85 | 0.90 | - | A/W |
| λ =1550nm | - | 0.95 | - | |||
| λ =850nm | - | 0.20 | - | |||
| Dark current | ID | Vr=5V | - | 1.5 | 10.0 | nA |
| Capacitance | C | VR=5V, f=1MHz | - | 50 | 80 | pF |
| Bandwidth (3dB down) | Bw | V=0V, RL =50Ω | - | 40 | - | MHz |
| Parameter | Symbol | Value | Unit |
| Active area diameter | D | 1000±10 | um |
| Bond pad diameter | - | 120±3 | um |
| Die size | - | 1250x1250 (±30) | um |
| Die thickness | t | 180±20 | um |
All products have been tested before shipping out;
All products have 1-3 years warranty.(After the quality guarantee period began to charge appropriate maintenance service fee.)
We appreciate your business and offer an instant 7 days return policy. (7 days after receiving the items);
If the items you purchase from our store are not of perfected quality, that is they don‘t work electronically to manufacturers specifications, simply return them to us for replacement or refund;
If the items are defective, please notify us within 3 days of delivery;
Any items must be returned in their original condition to qualify for a refund or replacement;
The buyer is responsible for all the shipping cost incurred.
A: we have 0.3mm 0.5mm 1mm 2mm active area InGaAs Photodiode Chip.
Q: What is the requirement for the connector?A: Box Optronics can customize according to your requirements.
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