200um InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.
BoxOptronics Radiation Resistant Erbium Doped Fiber has good anti-radiation characteristics, which can effectively reduce the impact of high-energy ion radiation on erbium-doped fiber. The fiber has good consistency. It can be pumped by 980 nm or 1480 nm, and can realize low-loss connection with communication optical fiber.
The High Power C-band 5W 37dBm EDFA Fiber Optical Amplifiers (EYDFA-HP) is based on the double-clad erbium-doped fiber amplifier technology, using a unique optical packaging process, coupled with a reliable high-power laser protection design, to achieve high-power laser output in the 1540~1565nm wavelength range. With high power and low noise, it can be used in fiber optic communication, Lidar, etc.
500um Large Area InGaAs Avalanche Photodiode Chip is specially designed to have a low dark, low capacitance and high avalanche gain. Using this chip an optical receiver with a high sensitivity can be achieved.
This 1550nm 10W CW High Power Fiber Laser adopts DFB laser chip and high-power gain optical path module to realize the high-power output of single-mode fiber. The professionally designed laser driving and temperature control circuit ensures the safe and stable operation of the laser.
BoxOptronics Polarization-Maintaining Radiation Resistant Erbium-doped Fiber has good Radiation Resistant characteristics, which can effectively reduce the impact of high-energy ion radiation on erbium-doped fiber,It also has high birefringence and excellent polarization-maintaining properties. The fiber has good consistency. It can be pumped at 980 nm or 1480 nm, and can realize low-loss connection with communication optical fiber.
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