1550nm DFB Fiber Coupled Butterfly Laser Diode Manufacturers

Our commission is to serve our buyers and purchasers with most effective good quality and aggressive portable digital goods for 1550nm DFB Fiber Coupled Butterfly Laser Diode, Our experienced specialized group will be wholeheartedly at your support. We sincerely welcome you to check out our site and enterprise and send out us your inquiry.
1550nm DFB Fiber Coupled Butterfly Laser Diode, Nowadays our merchandise sell all over the domestic and abroad thanks for the regular and new customers support. We supply high quality product and competitive price, welcome the regular and new customers cooperate with us!

Hot Products

  • High Power Pm Erbium-doped Fiber Amplifier Module

    High Power Pm Erbium-doped Fiber Amplifier Module

    High Power Pm Erbium-doped Fiber Amplifier Module can provide desktop or rack type packaging according to the needs of customers, and accept customized parameters.
  • Homogenized Fiber

    Homogenized Fiber

    The Homogenized Fiber Multimode flat-top energy transmission fiber is specially developed and designed for high-power fiber laser output spot shaping, and can homogenize the Gaussian beam output by the fiber laser.
  • 1310nm DFB Butterfly Fiber Coupled Laser Diode

    1310nm DFB Butterfly Fiber Coupled Laser Diode

    The 1310nm DFB Butterfly Fiber Coupled Laser Diode is a high performance single wavelength source, available in a 14-pin butterfly package with PM fiber or SM fiber pigtail. The frequency response and linearity of this laser makes it an excellent choice for CATV systems, GSM/CDMA repeater, and optical sensing.
  • Highly Doped Phosphorus Raman Fibers

    Highly Doped Phosphorus Raman Fibers

    Boxoptronics' Highly Doped Phosphorus Raman Fibers are designed for efficient Raman lasers and amplifiers operating in the 1.1-1.6 µm spectral range. The main advantage of phosphorous-doped fiber is the three times higher Raman shift value compared to germanium-doped fiber. This feature can greatly simplify the design of Raman fiber lasers and amplifiers.
  • 50um InGaAs Avalanche Photodiode Chip

    50um InGaAs Avalanche Photodiode Chip

    50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.
  • Dispersion Compensation Polarization Maintaining Erbium Doped Fiber

    Dispersion Compensation Polarization Maintaining Erbium Doped Fiber

    BoxOptronics Dispersion Compensation Polarization Maintaining Erbium Doped Fiber adopts high doping and polarization maintaining design, mainly used for 1.5μm fiber laser. The fiber's unique core and refractive index profile design make it have high normal dispersion and excellent polarization maintaining characteristics. The fiber has a higher doping concentration, which can reduce the fiber length, thereby reducing the influence of nonlinear effects. At the same time, the optical fiber shows low splicing loss and strong bending resistance. It has good consistency.

Send Inquiry