1576nm 10mW DFB Butterfly Laser Diode Manufacturers

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1576nm 10mW DFB Butterfly Laser Diode, Our product quality is one of the major concerns and has been produced to meet the customer's standards. "Customer services and relationship" is another important area which we understand good communication and relationships with our customers is the most significant power to run it as a long term business.

Hot Products

  • 50um InGaAs avalanche photodiodes APDs

    50um InGaAs avalanche photodiodes APDs

    50um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 900 to 1700nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography. The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
  • NIR 830 Superluminescent Diodes SLD

    NIR 830 Superluminescent Diodes SLD

    The NIR 830 Superluminescent Diodes SLD that operates in a true inherent superluminescent mode. This superluminescent property generates broader band at higher drive currents in contrast to other conventional SLED which are ASE-based, here high drive tends to give narrower band. Its low coherence reduces Rayleigh backscattering noise. Coupled with high power and large spectral width, it offsets photoreceiver noise and improves spatial resolution (in OCT) and measurand sensitivity (in sensors). The SLED is available in 14-pin butterfly package. It is compliance with the requirements of Bellcore Document GR-468-CORE.
  • 1450nm 500mw Raman Amplifier Pump Laser With TEC Cooler

    1450nm 500mw Raman Amplifier Pump Laser With TEC Cooler

    1450nm 500mw Raman Amplifier Pump Laser With TEC Cooler can be used in scientific research, experiment and production test, and pump optical source of fiber Raman amplifier.
  • 1mm InGaAs/InP PIN Photodiode Chip

    1mm InGaAs/InP PIN Photodiode Chip

    The 1mm InGaAs/InP PIN Photodiode Chip offer superb response from 900nm to 1700nm, 1mm InGaAs/InP PIN Photodiode Chip is ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current and high bandwidth for high performance and low sensitivity receiver design. This device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination PIN photo diode – transimpedance amplifier.
  • 1570~1603nm L-band EDFA Amplifier

    1570~1603nm L-band EDFA Amplifier

    The following is about 1570~1603nm L-band EDFA Amplifier related, I hope to help you better understand 1570~1603nm L-band EDFA Amplifier. Welcome new and old customers to continue to cooperate with us to create a better future together!
  • 1550nm SLD broadband light source

    1550nm SLD broadband light source

    The 1550nm SLD broadband light source adopts semiconductor super radiant diode technology to output a broadband spectrum and at the same time has a higher output power. The working wavelength can be selected from 840nm 1310nm 1550nm and other wavelength, which is suitable for applications such as optical fiber sensing. We can provide communication interface and host computer software to facilitate the monitoring of the state of the light source.

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