High Power EDFA Amplifier Module Manufacturers

We emphasize development and introduce new products into the market every year for High Power EDFA Amplifier Module, Living by quality, development by credit is our eternal pursuit, We firmly believe that after your visit we will become long-term partners.
High Power EDFA Amplifier Module, We have been in operation for more than 10 years. We have been dedicated to quality products and solutions and consumer support. We currently own 27 product utility and design patents. We invite you to visit our company for a personalized tour and advanced business guidance.

Hot Products

  • C-band Erbium-doped Fiber Pre-amplifier Module

    C-band Erbium-doped Fiber Pre-amplifier Module

    You can rest assured to buy C-band Erbium-doped Fiber Pre-amplifier Module from our factory and we will offer you the best after-sale service and timely delivery.
  • 200um InGaAs avalanche photodiodes APDs

    200um InGaAs avalanche photodiodes APDs

    200um InGaAs avalanche photodiodes APDs is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall time throughout the 1100 to 1650nm wavelength range, the peak responsivity at 1550nm is idealy suited to eys-safe rangefinding applications, free space optical communications, OTDR and Optical Coherence Tomography. The chip is hermetically sealed in a modified TO package, pigtailed option is also available.
  • 940nm 10W 2-PIN Fiber Coupled Diode Laser

    940nm 10W 2-PIN Fiber Coupled Diode Laser

    The 940nm 10W 2-PIN Fiber Coupled Diode Laser offer up to 10 watts of CW output power from a 105 µm fiber. The model referenced in this product listing has a numerical aperture of 0.22. The fiber is un-terminated for direct coupling to your sample or fiber cladding layer. The 940nm 10W series multimode pump modules offer high brightness, It have been widely used in laser pump, print, and medical care.
  • 50um InGaAs Avalanche Photodiode Chip

    50um InGaAs Avalanche Photodiode Chip

    50um InGaAs Avalanche Photodiode Chip is photodiode with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 900 - 1650nm.
  • Single-frequency Pulsed Erbium-doped Fiber Amplifier EDFA

    Single-frequency Pulsed Erbium-doped Fiber Amplifier EDFA

    BoxOptronics Single-frequency Pulsed Erbium-doped Fiber Amplifier EDFA is a fiber amplifier dedicated to narrow linewidth single-frequency nanosecond pulses. The spectral linewidth of the input laser pulse can be as low as the KHz level. It can achieve high pulse energy output while effectively suppressing non-linear pulses. Linear effect, single mode or polarization maintaining fiber output. Can be used in distributed sensing, Doppler lidar and other applications.
  • Erbium-ytterbium Co-doped Single-mode Fiber

    Erbium-ytterbium Co-doped Single-mode Fiber

    BoxOptronics Erbium-ytterbium co-doped single-mode fibers are mainly used in high-power telecom/CATV fiber amplifiers, laser ranging, lidar, and eye-safe lasers. The optical fiber has low splicing loss and high light-to-light conversion efficiency. Higher absorption coefficient guarantees output power and lower cost. The optical fiber can adjust the absorption coefficient and gain spectrum with good consistency.

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